Comparative models for diffusion of Be in InGaAs/InP heterostructures
Identifieur interne : 011652 ( Main/Repository ); précédent : 011651; suivant : 011653Comparative models for diffusion of Be in InGaAs/InP heterostructures
Auteurs : RBID : Pascal:01-0317066Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Diffusion(transport), Hétérostructure, Matériau dopé, Couche épitaxique, Structure sandwich, Ségrégation, Condition aux limites, Interface solide solide, SIMS, Distribution concentration, Addition béryllium, Composé ternaire, Gallium arséniure, Indium arséniure, Indium phosphure, Matériau semiconducteur, Composé binaire, As Ga In, InGaAs, In P, InP, 6835F, 6865.
English descriptors
- KwdEn :
- Beryllium additions, Binary compounds, Boundary conditions, Concentration distribution, Diffusion, Doped materials, Epitaxial layers, Experimental study, Gallium arsenides, Heterostructures, Indium arsenides, Indium phosphides, SIMS, Sandwich structures, Segregation, Semiconductor materials, Solid-solid interfaces, Ternary compounds.
Abstract
A systematic study of Be diffusion from a Be-doped (3 × 1019 cm-3) In0.53Ga0.47As epilayer sandwiched between undoped InP epilayers was carried out. Using the boundary conditions and the segregation phenomena at InGaAs/InP interfaces, and taking into account built-in electric field, Fermi-level and bulk self-interstitial generation/annihilation effects, the concentration profiles of Be in the InGaAs/InP heterostructure have been simulated according to two 'kick-out' models. Comparison with experimental data shows that the first model, involving neutral Be interstitials in InGaAs and singly positively charged Be interstitials in InP, gives a better description than the second one, using neutral Be interstitials in InGaAs and InP.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 010D72
Links to Exploration step
Pascal:01-0317066Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comparative models for diffusion of Be in InGaAs/InP heterostructures</title><author><name sortKey="Koumetz, S" uniqKey="Koumetz S">S. Koumetz</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Ketata, K" uniqKey="Ketata K">K. Ketata</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Ihaddadene, M" uniqKey="Ihaddadene M">M. Ihaddadene</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Martin, P" uniqKey="Martin P">P. Martin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Ketata, M" uniqKey="Ketata M">M. Ketata</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Dubois, C" uniqKey="Dubois C">C. Dubois</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>LPM-INSA de Lyon</s1><s3>FRA</s3><sZ>6 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>LPM-INSA de Lyon</wicri:noRegion><wicri:noRegion>LPM-INSA de Lyon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0317066</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 01-0317066 INIST</idno><idno type="RBID">Pascal:01-0317066</idno><idno type="wicri:Area/Main/Corpus">010D72</idno><idno type="wicri:Area/Main/Repository">011652</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title><title level="j" type="main">Journal of physics. Condensed matter : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term><term>Binary compounds</term><term>Boundary conditions</term><term>Concentration distribution</term><term>Diffusion</term><term>Doped materials</term><term>Epitaxial layers</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Indium phosphides</term><term>SIMS</term><term>Sandwich structures</term><term>Segregation</term><term>Semiconductor materials</term><term>Solid-solid interfaces</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Diffusion(transport)</term><term>Hétérostructure</term><term>Matériau dopé</term><term>Couche épitaxique</term><term>Structure sandwich</term><term>Ségrégation</term><term>Condition aux limites</term><term>Interface solide solide</term><term>SIMS</term><term>Distribution concentration</term><term>Addition béryllium</term><term>Composé ternaire</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Indium phosphure</term><term>Matériau semiconducteur</term><term>Composé binaire</term><term>As Ga In</term><term>InGaAs</term><term>In P</term><term>InP</term><term>6835F</term><term>6865</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A systematic study of Be diffusion from a Be-doped (3 × 10<sup>19</sup> cm<sup>-3</sup>) In<sub>0.53</sub>Ga<sub>0.47</sub>As epilayer sandwiched between undoped InP epilayers was carried out. Using the boundary conditions and the segregation phenomena at InGaAs/InP interfaces, and taking into account built-in electric field, Fermi-level and bulk self-interstitial generation/annihilation effects, the concentration profiles of Be in the InGaAs/InP heterostructure have been simulated according to two 'kick-out' models. Comparison with experimental data shows that the first model, involving neutral Be interstitials in InGaAs and singly positively charged Be interstitials in InP, gives a better description than the second one, using neutral Be interstitials in InGaAs and InP.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Comparative models for diffusion of Be in InGaAs/InP heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>KOUMETZ (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>KETATA (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>IHADDADENE (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>MARTIN (P.)</s1></fA11><fA11 i1="05" i2="1"><s1>KETATA (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>DUBOIS (C.)</s1></fA11><fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>LPM-INSA de Lyon</s1><s3>FRA</s3><sZ>6 aut.</sZ></fA14><fA20><s2>L483-L486</s2></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000097740930060</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>4 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0317066</s0></fA47><fA60><s1>P</s1><s3>LT</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>A systematic study of Be diffusion from a Be-doped (3 × 10<sup>19</sup> cm<sup>-3</sup>) In<sub>0.53</sub>Ga<sub>0.47</sub>As epilayer sandwiched between undoped InP epilayers was carried out. Using the boundary conditions and the segregation phenomena at InGaAs/InP interfaces, and taking into account built-in electric field, Fermi-level and bulk self-interstitial generation/annihilation effects, the concentration profiles of Be in the InGaAs/InP heterostructure have been simulated according to two 'kick-out' models. Comparison with experimental data shows that the first model, involving neutral Be interstitials in InGaAs and singly positively charged Be interstitials in InP, gives a better description than the second one, using neutral Be interstitials in InGaAs and InP.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H35F</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Diffusion</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Heterostructures</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Doped materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Structure sandwich</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Sandwich structures</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ségrégation</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Segregation</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Condition aux limites</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Boundary conditions</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Interface solide solide</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Solid-solid interfaces</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>SIMS</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>SIMS</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Distribution concentration</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Concentration distribution</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Distribución concentración</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Addition béryllium</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Beryllium additions</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>19</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>19</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Composé binaire</s0><s5>20</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Binary compounds</s0><s5>20</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>6835F</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>218</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 011652 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 011652 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:01-0317066
|texte= Comparative models for diffusion of Be in InGaAs/InP heterostructures
}}
| This area was generated with Dilib version V0.5.77. |  |